Vanessa Seward Woman Ruffled Crepe De Chine Mini Dress Red Size 42 Vanessa Seward Buy Cheap 2018 New Low Shipping Cheap Online Low Cost Cheap Online Sale Original mOZCWOJ0

Vanessa Seward Woman Ruffled Crepe De Chine Mini Dress Red Size 42 Vanessa Seward Buy Cheap 2018 New Low Shipping Cheap Online Low Cost Cheap Online Sale Original mOZCWOJ0
Vanessa Seward Woman Ruffled Crepe De Chine Mini Dress Red Size 42 Vanessa Seward
Contact Us Outlet Shopping Online Cheap Real Sequin Fringe Swimsuit Multi sequin Jaded London Shopping Online Clearance YaHR5W
Outlet Countdown Package Valentino Woman Ruffletrimmed Crochetknit Silk Dress Sky Blue Size XL Valentino Cheap Buy Authentic t1gnW6rNQ
About the co-operation
Clearance Store Cheap Online Cheap Sale Deals Ruched Waist Lace Midi Dress With 3/4 Length Sleeve Dark grey Elise Ryan Petite PXAFsDAp

For full functionality of this site, please enable browser cookies. ORCID uses cookies to improve your experience and to help us understand how you use our websites. Cheap Sale Shopping Online Clearance Enjoy 3pack Menamp;aposs Sports Socks Grey melange HEMA Clearance Choice Shopping Discounts Online Reliable Cheap Price EAaPS

Connecting Research and Researchers

Calvin Klein Woman Lacepaneled Knitted Balconette Bra Red Size 32 C Calvin Klein Perfect Clearance Get To Buy Super Specials uRfmgo

Submitted by Laure Haak on Sun, 2015-10-25 13:19

Since ORCID’s inception, our key goal has been to unambiguously identify researchers and provide tools to automate the connection between researchers and their creative works. We are taking a big step towards achieving this goal today, with the launch of Auto-Update functionality in collaboration with Raoul Woman Flared Twotone Cady Mini Dress Lavender Size 38 Raoul Explore Sale Online Discount Reliable Free Shipping Ebay Footlocker Finishline Online vBLnR
and Cheap Sale Good Selling Lace dress 1/2length sleeves Peter Hahn black Peter Hahn Buy Cheap Get Authentic Clearance Clearance tfhn82

There’s already been a lot of excitement about Auto-Update: Crossref’s recent announcement about the imminent launch generated a flurry of discussion and celebration on social media. Our own tweet on the topic was viewed over 10,500 times and retweeted by 60 other accounts.

So why all the fuss? We think Auto-Update will transform the way researchers manage their scholarly record. Until now, researchers have had to manually maintain their record, connecting new activities as they are made public. In ORCID, that meant using Sale With Credit Card Womens Lucie SoutienGorge à Armatures 100 Coton Underwired Plain Bra Naturana Clearance Manchester Largest Supplier Cheap Online Discounts Cheap Price vbBHHc7Hws
tools developed by our member organizations to claim works manually. Researchers frequently ask, “Why, if I include my ORCID iD when I submit a manuscript or dataset, isn’t my ORCID record “automagically” updated when the work is published?”

With the launch of Auto-Update, that is just what will happen.

It might seem like magic but there are a few steps to make it work:

More information about how to opt out of this service can be found here: the ORCID Inbox .

Why is this so revolutionary?

A bit of background, first. Crossref and DataCite, both non-profit organizations, are leaders in minting DOIs (Digital Object Identifiers) for research publications and datasets. A is a unique alphanumeric string assigned to a digital object – in this case, an electronic journal article, book chapter, or a dataset. Each DOI is associated with a set of basic metadata and a URL pointer to the full text, so that it uniquely identifies the content item and provides a persistent link to its location on the internet.

Crossref, working with over a thousand scholarly publishers, has generated well over 75 million DOIs for journal articles and book chapters. DataCite works with nearly 600 data centers worldwide and has generated over 6.5 million DOIs to date. Between them, Crossref and DataCite have already received almost a half a million works from publishers and data centers that include an ORCID iD validated by the author/contributor. With Auto-Update functionality in place, information about these articles can transit (with the author’s permission) to the author’s ORCID record.

Auto-Update doesn’t stop at a researcher’s ORCID record. Systems that have integrated ORCID APIs and have a researcher’s ORCID record connected to that system -- their faculty profile system, library repository, webpage, funder reporting system -- can receive alerts from ORCID. Information can move easily and unambiguously across systems.

This is the beginning of the end for the endless rekeying of information that plagues researchers -- and anyone involved in research reporting. Surely something to celebrate!

Questions you may have:

Q. What do I need to do to sign up for auto-update?

You need to grant permission to Crossref and DataCite to post information to your ORCID record. You can do this today by using the Search and Link wizard for DataCite available through the ORCID Registry or the DataCite Discount 100% Authentic Gosssard Lace Hipster Short Pink Gossard Free Shipping New Arrival Discounts Cheap Online 2018 Unisex For Sale j2TlJ
page. We also have added a new ORCID Inbox, so that you can receive a message from Crossref or DataCite if they receive a datafile with your iD, and you can grant permission directly. See more on the ORCID Inbox .

Q. Will Crossref and DataCite be able to update my ORCID record with already published works for which I did not use my ORCID iD?

No. The auto-update process only applies to those works that these organizations receive that include your ORCID iD. For previous works that did not include your ORCID iD, you will need to use the DataCite and Crossref Search and Link wizards to connect information with your iD.

Q. What information will be posted to my record?

With your permission, basic information about the article (such as title, list of contributors, journal or publisher) or dataset (such as data center name and date of publication) will be posted, along with a DOI that allows users to navigate to the source paper or dataset landing page.

Q. What if my journal or data center doesn’t collect ORCID iDs?

Ask them to! This simple step can be accomplished using either the Public or Member ORCID APIs. Information about integrating ORCID iDs in publishing and repository workflows is publicly available.

July 2018
July 2018

Press Resources > Press Release

Products > Semiconductors

Samsung Electronics Brings Next Wave of High-Performance Storage with Mass Production of Fifth-generation V-NAND

Korea on July 10, 2018

Samsung’s new 256Gb V-NAND features industry’s fastest data transfer speed, while being the first to apply the ‘Toggle DDR 4.0’ NAND interface

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry’s first use of the ‘Toggle DDR 4.0’ interface, the speed for transmitting data between storage and memory over Samsung’s new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.

The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.

Packed inside Samsung’s fifth-generation V-NAND are more than 90 layers of ‘3D charge trap flash (CTF) cells,’ the largest amount in the industry, stacked in a pyramid structure with microscopic channel holes vertically drilled throughout. These channel holes, which are only a few hundred-nanometers (nm)-wide, contain more than 85 billion CTF cells that can store three bits of data each. This state-of-the-art memory fabrication is the result of several breakthroughs that include advanced circuit designs and new process technologies.

Thanks to enhancements in the V-NAND’s atomic layer deposition process, manufacturing productivity has also increased by more than 30 percent. The cutting-edge technique allows the height of each cell layer to be reduced by 20 percent, prevents crosstalk between cells and increases the efficiency of the chip’s data processing.

“Samsung’s fifth-generation V-NAND products and solutions will deliver the most advanced NAND in the rapidly growing premium memory market,” said Kye Hyun Kyung, executive vice president of Flash Product and Technology at Samsung Electronics. “In addition to the leading-edge advances we are announcing today, we are preparing to introduce 1-terabit (Tb) and quad-level cell (QLC) offerings to our V-NAND lineup that will continue to drive momentum for next-generation NAND memory solutions throughout the global market.”

Samsung will be quickly ramping up production of its fifth-generation V-NAND to meet a wide range of market needs, as it continues to lead the high-density memory movement across critical sectors such as supercomputing, enterprise servers and the latest mobile applications such as premium smartphones.

TAGS 5th Generation V-NAND , Flash Product and Technology , Toggle DDR 4.0 , V-NAND
5th Generation V-NAND 1
5th Generation V-NAND 2
5th Generation V-NAND 3
5th Generation V-NAND 4
※ All images attached in the press releases published on Samsung Newsroom are also available on plain blouse White Fabiana Filippi Cheap Low Cost Authentic Discount Authentic Cheap Collections wAshychX4
Related Articles

© Copyright 2003 to 2018 Customized Wear. All rights reserved.

Key Info
Site Map
Copyright Information

© Copyright 2003 to 2018 Customized Wear.All rights reserved.

*No Sales Tax except when shipping to Florida state. If you are requesting us to ship to Florida, you must provide your resale certificate at the time you place your order.